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Rise time : 12us
Fall time : 12us
Output Current : 50mA
Vce Saturation(VCE(sat)) : 100mV@1mA,20mA
Operating Temperature : -55℃~+110℃
Load Voltage : 80V
Reverse Voltage : 5V
Load Type : Phototransistor
Current transfer ratio : 100%;600%
Forward Current(If) : 50mA
Input type : DC
Isolation Voltage(Vrms) : 3.75kV
Number of Channels : 1
Description : Phototransistor Output 3.75kVrms 1 Channel SOP-4
Mfr. Part # : MTLP181GB
Model Number : MTLP181GB
Package : SOP-4
The MTLP181 is a compact surface-mount optocoupler designed for high-density surface-mount applications, such as programmable controllers. It comprises a gallium arsenide light-emitting diode and a phototransistor, offering a smaller footprint than DIP packages. Key features include a wide current transfer ratio (CTR) range, high input-output isolation voltage, and a robust operating temperature range.
| Model | Package | Minimum Packaging Quantity |
|---|---|---|
| MTLP181 | SOP-4 | 3000 |
| Parameter | Symbol | Rating | Unit | |||
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Input Forward Current | IF | 50 | mA | |||
| Input Pulse Current | IFP | 1 | A | |||
| Input Reverse Voltage | VR | 5 | V | |||
| Input Power Dissipation | P | 70 | mW | |||
| Input Junction Temperature | Tj | 125 | C | |||
| Output Collector Power Dissipation | PC | 150 | mW | |||
| Output Collector Current | IC | 50 | mA | |||
| Output Collector-Emitter Voltage | VCEO | 80 | V | |||
| Output Emitter-Collector Voltage | VECO | 7 | V | |||
| Output Junction Temperature | Tj | 125 | C | |||
| Total Power Dissipation | Ptot | 200 | mW | |||
| Isolation Voltage | Viso | 3750 | Vrms | |||
| Operating Temperature | Topr | -55~+110 | C | |||
| Storage Temperature | Tstg | -55~+125 | C | |||
| Soldering Temperature | Tsol | 240(10s) | C | |||
| CTR Grading Table | ||||||
| Model | Body Marking | Grading Standard | CTR (%) (IC/IF) IF=5mA, VCE=5V, Ta=25C | |||
| MTLP181 | Blank | 50 - 600 | ||||
| MTLP181Y | Y | 50 - 150 | ||||
| MTLP181GR | GR | 100 - 300 | ||||
| MTLP181GB | GB | 100 - 600 | ||||
| MTLP181GL | BL | 200 - 600 | ||||
| Optoelectronic Characteristics (Ta=25) | ||||||
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Forward Voltage | VF | IF=20mA | 1.2 | 1.4 | V | |
| Reverse Current | IR | VR=5V | 10 | A | ||
| Input Capacitance | Cin | V=0, f= 1MHz | 30 | pF | ||
| Collector Dark Current | ICEO | VCE=70V | 100 | nA | ||
| Collector-Emitter Breakdown Voltage | BVCEO | IC=0.1mA, IF=0 | 80 | V | ||
| Emitter-Collector Breakdown Voltage | BVECO | IE=0.1mA, IF=0 | 7 | V | ||
| Current Transfer Ratio | CTR | IF=5mA, VCE=5V | 50 | 600 | % | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IF=20mA, IC=1mA | 0.1 | 0.2 | V | |
| Isolation Resistance | RISO | DC1000V, 40~60%R.H. | 1x1011 | |||
| Isolation Capacitance | Cf | V=0, f=1MHz | 0.6 | 1.0 | pF | |
| Collector-Emitter Capacitance | CCE | V=0, f=1MHz | 10 | pF | ||
| Input-Output Capacitance | Cs | V=0, f=1MHz | 0.8 | pF | ||
| Cutoff Frequency | Fc | VCE=5V, IC=2mA, RL=100, -3dB | 80 | kHz | ||
| Switching Time - Rise Time | Tr | VCE=10V, IC=2mA, RL=100 | 12 | s | ||
| Switching Time - Fall Time | Tf | 12 | s | |||
| Switching Time - Turn-on Time | Ton | 12 | s | |||
| Switching Time - Turn-off Time | Toff | 12 | s | |||
| Dimensions (mm) | Value |
|---|---|
| A0 | 12.000.10 |
| B0 | 1.750.10 |
| D0 | 5.200.20 |
| D1 | 7.000.30 |
| E | 1.50+0.10/-0 |
| F | 1.50+0.10/-0 |
| K0 | 4.000.10 |
| P0 | 2.54 TYP |
| P1 | 3.7-0.15/+0.25 |
| P2 | 4.55-0.15/0.25 |
| T | 0.400.10 |
| T1 | 2.1 0.1 |
| W | 8.000.10 |
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Surface mount optocoupler MSKSEMI MTLP181GB with small footprint and wide operating temperature range Images |