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Operating Temperature : -40℃~+125℃@(Ta)
Isolation voltage(Vrms) : 5700
Propagation Delay(tpd) : 110ns;110ns
Rise Time : 20ns
Voltage - Supply : 13.7V~32V;3.1V~17V
Fall Time : 19ns
CMTI(kV/us) : 150kV/us
Number of Channels : 1
Description : 20ns 19ns SOW-8 Isolators - Gate Drivers RoHS
Mfr. Part # : NSI6601C-DSWVR
Model Number : NSI6601C-DSWVR
Package : SOW-8
The NSI6601 is a single-channel isolated gate driver designed to drive IGBTs, power MOSFETs, and SiC MOSFETs. It features split outputs for individual control of rise and fall times, with a peak current capability of 5A source and sink. Available in SOP8 or SOW8 packages, it offers 3000VRMS or 5700VRMS isolation per UL1577, and a minimum common-mode transient immunity (CMTI) of 150kV/s. The driver operates with a maximum supply voltage of 32V, while the input side accepts 3.1V to 17V. Under-voltage lock-out (UVLO) protection is integrated across all power supply pins. Its high driving current, excellent robustness, wide supply voltage range, and fast signal propagation make the NSI6601 ideal for high reliability, power density, and efficiency switching power systems.
| Part Number | UVLO Level | Package | Body Size | Input Side Supply Voltage (VCC1-GND1) | Driver Side Supply Voltage (VCC2-VEE2) | Input Supply Quiescent Current (ICC1) | Output Supply Quiescent Current (ICC2) | Propagation Delay (typ) | CMTI (min) |
| NSI6601B-DSPR | 9V | SOP8 | 4.93.91.35mm | 3V to 17V | 10V to 32V | 0.9mA to 1.5mA | 1.6mA to 3mA | 78ns | 150kV/s |
| NSI6601C-DSPR | 13V | SOP8 | 4.93.91.35mm | 3V to 17V | 13.7V to 32V | 0.9mA to 1.5mA | 1.6mA to 3mA | 78ns | 150kV/s |
| NSI6601C-DSWVR | 13V | SOW8 | 7.55.852.3mm | 3V to 17V | 13.7V to 32V | 0.9mA to 1.5mA | 1.6mA to 3mA | 78ns | 150kV/s |
| NSI6601B-DSWVR | 9V | SOW8 | 7.55.852.3mm | 3V to 17V | 10V to 32V | 0.9mA to 1.5mA | 1.6mA to 3mA | 78ns | 150kV/s |
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Single channel isolated gate driver NOVOSENSE NSI6601C DSWVR for IGBTs power MOSFETs and SiC MOSFETs Images |