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High reliability digital isolator NOVOSENSE NSI8120N0 with consumption and excellent EMC performance

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High reliability digital isolator NOVOSENSE NSI8120N0 with consumption and excellent EMC performance

CMTI(kV/us) : 150kV/us

Voltage - Supply : 2.5V~5.5V;2.5V~5.5V

Propagation Delay(tpd) : 9ns

Default Output : Low Level

Number of Forward Channels : 2

Operating Temperature : -40℃~+125℃

Description : SOIC-8 Digital Isolators RoHS

Mfr. Part # : NSI8120N0

Model Number : NSI8120N0

Package : SOIC-8

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Product Overview

The NSi812x devices are high-reliability dual-channel digital isolators offering robust insulation withstand voltages (up to 5kVrms), superior electromagnetic immunity, and low power consumption. They support data rates up to 150Mbps with excellent common-mode transient immunity (CMTI) of 150kV/s. These isolators feature configurable digital channel direction and default output levels during power loss, simplifying level shifting with a wide supply voltage range. Enhanced system-level EMC performance ensures reliability and stability. An AEC-Q100 (Grade 1) option is available for 3.75kV parts.

Product Attributes

Brand: Novosense
Certifications: UL1577, CQC, CSA, DIN VDE V 0884-10 (pending)
AEC-Q100 Grade 1 available for 3.75kV parts
RoHS-compliant packages: SOIC-8 narrow body, SOIC-16 wide body

Technical Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Comments
Absolute Maximum Ratings
Power Supply Voltage	VDD1, VDD2	-0.5		6.5	V
Common-Mode Transients	CMTI	-150		150	kV/us
Operating Temperature	Topr	-40		125
Storage Temperature	Tstg	-40		150
Electrostatic Discharge (HBM)			6000		V
Electrical Characteristics (VDD1=2.5V~5.5V, VDD2=2.5V~5.5V, Ta=-40 to 125)
Power on Reset	VDDPOR	2.2			V	POR threshold as during power-up
Input Threshold Voltage	VIT		1.6		V
High Level Input Voltage	VIH	2			V
Low Level Input Voltage	VIL			0.8	V
High Level Output Voltage	VOH		VDD- 0.2		V	IOH 4mA
Low Level Output Voltage	VOL		0.2		V	IOL 4mA
Start Up Time after POR	trbs		3		usec
Common Mode Transient Immunity	CMTI	100		150	kV/us
Data Rate	DR	0		150	Mbps
Minimum Pulse Width	PW		5.0		ns
Propagation Delay (typ)	tPLH, tPHL		9.0	10	ns	CL=15pF
Pulse Width Distortion	PWD			5.0	ns	\|t PHL t PLH \|
Rising Time	tr		5.0		ns	CL = 15pF
Falling Time	tf		5.0		ns	CL = 15pF
Peak Eye Diagram Jitter	tJIT(PK)			350	ps
Channel-to-Channel Delay Skew	tSK(c2c)			2.5	ns
Part-to-Part Delay Skew	tSK(p2p)			5.0	ns
Supply Current (Typ. at VDD=5V, Ta=25)
Device	Parameter	Condition	Typ	Unit
NSi8120	IDD1(Q0)	All Input 0V	0.58	mA
NSi8120	IDD2(Q0)	All Input 0V	1.18	mA
NSi8120	IDD1(1M)	1Mbps, CL=15pF	1.71	mA
NSi8120	IDD2(1M)	1Mbps, CL=15pF	1.38	mA
NSi8121/NSi8122	IDD1(Q0)	All Input 0V	1.03	mA
NSi8121/NSi8122	IDD2(Q0)	All Input 0V	1.00	mA
NSi8121/NSi8122	IDD1(1M)	1Mbps, CL=15pF	1.72	mA
NSi8121/NSi8122	IDD2(1M)	1Mbps, CL=15pF	1.68	mA

2410121608_NOVOSENSE-NSI8120N0_C399512.pdf

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