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control component HXY MOSFET HL3053S1 with GaAs infrared diode and monolithic silicon photo triac

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control component HXY MOSFET HL3053S1 with GaAs infrared diode and monolithic silicon photo triac

Power Dissipation : 250mW

Operating Temperature : -40℃~+110℃

Isolation Voltage(Vrms) : 5kV

Static dv/dt : 1000V/us

Output Current(It(rms)) : 100mA

Forward Current : 50mA

Current - Surge(Itsm) : 1A

Voltage - Forward(Vf) : 1.2V

Number of terminals : 6

Description : 1000V/us 100mA 50mA 1.2V SMD-6P Triac, SCR Output Optoisolators RoHS

Mfr. Part # : HL3053S1

Model Number : HL3053S1

Package : SMD-6P

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Product Overview

The HL3053S1 series are GaAs infrared emitting diode optically coupled to a monolithic silicon non-zero voltage crossing photo triac. Designed for logic system interfaces, these devices are ideal for solid-state relays, industrial controls, motors, solenoids, and consumer appliances. They offer high input-output isolation voltage and high repetitive peak off-state voltage.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Certifications: RoHS

Technical Specifications

Parameter	Symbol	Values	Unit	Notes
Input Forward Current	IF	50	mA
Reverse Voltage	VR	6	V
Power Dissipation	P	120	mW
Junction Temperature	TJ	125		Input
Off-State Output Terminal Voltage	VDRM	600	V	Min. 600V
Peak Repetitive Surge Current	ITSM	1	A	(PW=1ms120 pps)
On-State RMS Current	IT(RMS)	100	mA
Junction Temperature	TJ	125		Output
Collector Power Dissipation	PC	150	mW
Operating Temperature Range	Topr	40 ~ 110
Storage Temperature Range	Tstg	55 ~ 125
Total Power Consumption	P(W)	250	mW
Isolation Voltage	VISO	5000	Vrms	(1). AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
Soldering Temperature	TSOL	260	C	(2).For 10 seconds
Input Forward Voltage	VF	1.2 - 1.6	V	IF=20mA
Reverse Current	VR	- 5	A	VR=6V
Output Peak Blocking Current, Either Direction	IDRM	- 500	nA	VDRM = Rated VDRM 1Test voltage must be applied within dv/dt rating.
Peak On-State Voltage, Either Direction	VTM	- 3	V	ITM= 100mA
Peak Critical rate of Rise of Off-State Voltage	dv/dt	1000	V/s	Vin=240Vrms 2This is static dv/dt. Commutating dv/dt is a function of the load-driving thyristor(s) only.
Coupled LED Trigger Current, Current Required to Latch Output, Either Direction	IFT	- 5	mA	Main Terminal Voltage = 3V
Holding Current, Either Direction	IH	200	uA

2509181601_HXY-MOSFET-HL3053S1_C48783754.pdf

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