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VISHAY 4N35 Optocoupler Featuring Phototransistor Output and Base Connection for Reed Relay Driving

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VISHAY 4N35 Optocoupler Featuring Phototransistor Output and Base Connection for Reed Relay Driving

Fall time : -

Output Current : 50mA

Rise time : -

Vce Saturation(VCE(sat)) : -

Operating Temperature : -55℃~+100℃

Load Voltage : 70V

Reverse Voltage : 6V

Current transfer ratio : 40%;100%

Voltage - Forward(Vf) : 1.2V

Forward Current(If) : 60mA

Number of Channels : 1

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 5kV

Description : 50mA 70V 6V 1.2V DC DIP-6 Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : 4N35

Model Number : 4N35

Package : DIP-6

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Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection

This datasheet presents Vishay industry-standard single-channel phototransistor couplers, including the 4N35, 4N36, 4N37, and 4N38 families. Each optocoupler comprises a gallium arsenide infrared LED and a silicon NPN phototransistor. These devices offer high isolation performance, achieved through Vishay's double molding isolation manufacturing process and adherence to the ISO9001 quality program. They are available in lead-formed configurations suitable for surface mounting and are compliant with RoHS Directive 2002/95/EC and WEEE 2002/96/EC. Applications include AC mains detection, reed relay driving, switch mode power supply feedback, telephone ring detection, logic ground isolation, and logic coupling with high-frequency noise rejection.

Product Attributes

Brand: Vishay Semiconductors
Type: Optocoupler, Phototransistor Output, with Base Connection
Certifications: UL, cUL, BSI, FIMKO, CQC, DIN EN 60747-5-5 (pending with option 1)
Material: Gallium Arsenide Infrared LED and Silicon NPN Phototransistor
Package: Industry standard dual-in-line 6 pin package (DIP-6), SMD-6

Technical Specifications

Parameter	Test Condition	Symbol	4N35 (MIN)	4N35 (TYP)	4N35 (MAX)	4N36 (MIN)	4N36 (TYP)	4N36 (MAX)	4N37 (MIN)	4N37 (TYP)	4N37 (MAX)	4N38 (MIN)	4N38 (TYP)	4N38 (MAX)	Unit
INPUT
Forward voltage	IF = 10 mA	VF	1.2	1.5		1.2	1.5		1.2	1.5		1.2	1.5		V
Forward voltage	IF = 10 mA, Tamb = - 55 C	VF	0.9	1.3	1.7	0.9	1.3	1.7	0.9	1.3	1.7	0.9	1.3	1.7	V
Reverse current	VR = 6 V	IR		0.1	10		0.1	10		0.1	10		0.1	10	A
Capacitance	VR = 0 V, f = 1 MHz	CO			25			25			25			25	pF
OUTPUT
Collector emitter breakdown voltage	IC = 1 mA	BVCEO	30			30			30			80			V
Emitter base breakdown voltage	IE = 100 A	BVECO			7			7			7			7	V
Collector base breakdown voltage	IC = 100 A, IB = 1 A	BVCBO	70			70			70			80			V
Collector emitter leakage current	VCE = 10 V, IF = 0	ICEO			50			50			50			50	nA
Collector emitter leakage current	VCE = 60 V, IF = 0	ICEO										50			nA
Collector emitter leakage current	VCE = 30 V, IF = 0, Tamb = 100 C	ICEO			500			500			500			500	A
Collector emitter leakage current	VCE = 60 V, IF = 0, Tamb = 100 C	ICEO										6			A
Collector emitter capacitance	VCE = 0	CCE			6			6			6			6	pF
COUPLER
Isolation test voltage	t = 1 s	VISO			5000			5000			5000			5000	VRMS
Creepage distance			7			7			7			7			mm
Clearance distance			7			7			7			7			mm
Isolation thickness	between emitter and detector		0.4			0.4			0.4			0.4			mm
Comparative tracking index	DIN IEC 112/VDE 0303, part 1		175			175			175			175
Isolation resistance	VIO = 500 V, Tamb = 25 C	RIO	10¹²			10¹²			10¹²			10¹²
Isolation resistance	VIO = 500 V, Tamb = 100 C	RIO	10¹¹			10¹¹			10¹¹			10¹¹
CURRENT TRANSFER RATIO (Tamb = 25 C)
CTRdc	VCE = 10 V, IF = 10 mA		100			100			100						%
CTRdc	VCE = 10 V, IF = 20 mA											20			%
CTRdc	VCE = 10 V, IF = 10 mA, TA = - 55 C to + 100 C		40	50		40	50		40	50					%
CTRdc	VCE = 10 V, IF = 20 mA											30			%
SWITCHING CHARACTERISTICS (Tamb = 25 C)
Turn-on time	VCC = 5 V, IC = 2 mA, RL = 100	ton			10			10			10			10	s
Turn-off time	VCC = 5 V, IC = 2 mA, RL = 100	toff			10			10			10			10	s

2410121742_VISHAY-4N35_C506472.pdf

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