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High Isolation Dual Channel Optocoupler VISHAY ILD213T with Narrow CTR Tolerance and Tape Reel Packaging

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High Isolation Dual Channel Optocoupler VISHAY ILD213T with Narrow CTR Tolerance and Tape Reel Packaging

Rise time : 3us@2mA,100Ω

Fall time : 4.7us

Output Current : -

Vce Saturation(VCE(sat)) : 400mV@2.5mA,10mA

Operating Temperature : -55℃~+100℃

Load Voltage : 70V

Reverse Voltage : 6V

Current transfer ratio : 100%

Voltage - Forward(Vf) : 1.2V

Forward Current(If) : 30mA

Number of Channels : 2

Load Type : Phototransistor

Input type : DC

Isolation Voltage(Vrms) : 4kV

Description : 400mV@2.5mA,10mA 70V 6V 1.2V DC SOIC-8 Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : ILD213T

Model Number : ILD213T

Package : SOIC-8

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Product Overview

The ILD205T, ILD206T, ILD207T, ILD211T, and ILD213T are dual-channel optocouplers featuring a gallium arsenide infrared LED and a silicon NPN phototransistor. They provide high electrical isolation for signal transmission, including DC levels. Designed for surface mounting in a SOIC-8 package, these devices are ideal for high-density, space-constrained applications. The narrow tolerance in Current Transfer Ratio (CTR) and a high collector-emitter breakdown voltage (BVCEO) of 70 V offer enhanced design flexibility and safety.

Product Attributes

Brand: Vishay Semiconductors
Package: SOIC-8
Certifications: UL1577 (file no. E52744), cUL (file no. E52744)
Material: Gallium Arsenide Infrared LED, Silicon NPN Phototransistor
Availability: Tape and Reel (EIA standard 481-2)

Technical Specifications

Part Number	Agency Certified/Package	CTR (%) (IF=10mA, VCE=5V)	CTR (%) (IF=1mA, VCE=5V)	Isolation Test Voltage	BVCEO (V)
ILD205T	UL, cUL / SOIC-8	40 to 80	13 to 30	4000 VRMS	70
ILD206T	UL, cUL / SOIC-8	63 to 125	22 to 45	4000 VRMS	70
ILD207T	UL, cUL / SOIC-8	100 to 200	34 to 70	4000 VRMS	70
ILD211T	UL, cUL / SOIC-8	20	-	4000 VRMS	70
ILD213T	UL, cUL / SOIC-8	100	-	4000 VRMS	70

Absolute Maximum Ratings

Parameter	Test Condition	Symbol	Value	Unit
Peak reverse voltage		VR	6	V
Peak pulsed current	1 s, 300 pps		1	A
Continuous forward current per channel		IF	30	mA
Power dissipation (per channel)		Pdiss	125	mW
Collector emitter breakdown voltage		BVCEO	70	V
Emitter collector breakdown voltage		BVECO	7	V
Total package dissipation	(2 LEDs and 2 detectors, 2 channels)	Ptot	350	mW
Storage temperature		Tstg	-55 to +150	C
Operating temperature		Tamb	-55 to +100	C

Electrical Characteristics

Parameter	Test Condition	Symbol	Min.	Typ.	Max.	Unit
Forward voltage	IF = 10 mA	VF	-	1.2	1.55	V
Reverse current	VR = 6 V	IR	-	0.1	100	A
Collector emitter breakdown voltage	IC = 10 A	BVCEO	70	-	-	V
Emitter collector breakdown voltage	IE = 10 A	BVECO	7	-	-	V
Collector emitter leakage current	VCE = 10 V, IF = 0 A	ICEO	-	5	50	nA
Collector emitter saturation voltage	IF = 10 mA, IC = 2.5 mA	VCEsat	-	-	0.4	V

Switching Characteristics

Parameter	Test Condition	Symbol	Min.	Typ.	Max.	Unit
Delay time	(see figure 1)	td	-	3	-	s
Rise time	(see figure 1)	tr	-	3	-	s
Fall time	(see figure 1)	tf	-	4.7	-	s
Storage time	(see figure 1)	ts	-	0.3	-	s
Turn-on time	(see figure 1)	ton	-	6	-	s
Turn-off time	(see figure 1)	toff	-	5	-	s
Turn-on time	(see figure 2)	ton	-	3	-	s
Turn-off time	(see figure 2)	toff	-	10	-	s

2410121742_VISHAY-ILD213T_C435834.pdf

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