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CT MICRO CT184GB T1 4 Pin Mini Flat Phototransistor Optocoupler Suitable for Industrial Applications

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CT MICRO CT184GB T1 4 Pin Mini Flat Phototransistor Optocoupler Suitable for Industrial Applications

Fall time : 9us

Output Current : 50mA

Rise time : 5us

Vce Saturation(VCE(sat)) : 400mV@2.4mA,8mA

Operating Temperature : -55℃~+110℃

Load Voltage : 80V

Reverse Voltage : 6V

Current transfer ratio : 100%;400%

Forward Current(If) : 50mA

Pd - Power Dissipation : 200mW

Number of Channels : -

Load Type : Phototransistor

Input type : AC,DC

Isolation Voltage(Vrms) : 3.75kV

Description : 50mA 400mV@2.4mA,8mA 80V 6V AC,DC SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators RoHS

Mfr. Part # : CT184GB(T1)

Model Number : CT184GB(T1)

Package : SOP-4-2.54mm

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Product Overview

The CT184GB is a 4-pin Mini-Flat phototransistor optocoupler from CT Micro, designed for high-isolation applications. It features a phototransistor optically coupled to two gallium arsenide infrared-emitting diodes, offering high isolation voltage of 3750 VRMS and a wide operating temperature range of -55 C to 110 C. The device is available with multiple CTR selections and boasts a creepage distance of 5mm. Its green package and pending regulatory approvals from UL, VDE, CQC, and IEC make it suitable for demanding industrial environments. Applications include DC-DC converters, programmable controllers, telecommunication equipment, and hybrid substrates requiring high-density mounting.

Product Attributes

Brand: CT Micro
Package Type: 4-Pin Mini-Flat
Color: Green Package
Certifications (Pending Approval): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950

Technical Specifications

Parameter	Rating	Unit	Notes
Isolation Voltage (VISO)	3750	VRMS
Operating Temperature (TOPR)	-55 ~ +110	C
Storage Temperature (TSTG)	-55 ~ +150	C
Soldering Temperature (TSOL)	260	C
Total Power Dissipation (PTOT)	200	mW
Emitter Forward Current (IF)	50	mA
Emitter Peak Transient Current (IF(TRANS))	1	A	1s P.W, 300pps
Emitter Reverse Voltage (VR)	6	V
Emitter Power Dissipation (PD)	70	mW
Detector Power Dissipation (PC)	150	mW
Collector-Emitter Breakdown Voltage (BVCEO)	80	V
Emitter-Collector Breakdown Voltage (BVECO)	7	V
Collector Current (IC)	50	mA
Forward Voltage (VF)	1.24 - 1.4	V	IF = 10 mA
Reverse Current (IR)	- 5	A	VR = 5V
Input Capacitance (CIN)	10 - 250	pF	f = 1MHz
Collector-Emitter Breakdown Voltage (BVCEO)	80	V	IC = 100A
Emitter-Collector Breakdown Voltage (BVECO)	7	V	IE = 100A
Collector-Emitter Dark Current (ICEO)	0.01 - 0.08	A	VCE = 48V
Collector-Emitter Dark Current (ICEO)	2 - 50	A	VCE = 48V, TA = 85C
Collector-Emitter Capacitance (CCE)	10	-	f = 1MHz
Current Transfer Ratio (CTR)	100 - 400	%	IF = 5mA, VCE = 5V
Current Transfer Ratio (CTR)	30 -	%	IF = 1mA, VCE = 0.4V
CTR Symmetry	0.5 - 2	-	IF = 5mA, VCE = 5V
Collector-Emitter Saturation Voltage (VCE(SAT))	- 0.4	V	IF = 8mA, IC = 2.4mA
Off-state collector current (IC(off))	1 - 10	A	VCE = 48V, VF = 0.7V
Isolation Resistance (RIO)	1x10^12 - 10^14		VIO = 500VDC
Isolation Capacitance (CIO)	0.5	-	f=1MHz
Isolation Voltage (VISO)	3750	Vrms	AC, 60s
Isolation Voltage (VISO)	10000	-	AC, 1s in oil
Isolation Voltage (VISO)	10000	-	DC, 60s in oil
Rise Time (tr)	5	s	VCC = 10V, IC = 2mA, RL = 100
Fall Time (tf)	9	-
Turn-on time (ton)	9	-
Turn-off time (toff)	9	-
Turn-on time (ton)	2	-	VCC = 5V, IF = 16mA, RL = 1.9k
Storage time (ts)	30	-
Turn-off time (toff)	70	-

2410121512_CT-MICRO-CT184GB-T1_C191835.pdf

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